for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t hmc755lp4e gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz v03.1110 general description features functional diagram the h m c755 lp 4 e is a high gain, high linearity gaas i nga p hbt mmi c p ower amplifer covering 2.3 to 2.8 ghz. the amplifer provides 31 db of gain and +33 dbm of saturated power from a single +5v supply. the power control pins (v en 1, 2, 3) can be used to reduce the rf output power/quiescent cur - rent, or for full power down of the p a. the integrated output power detector (vd e t) is internally coupled and requires no external components. f or +25 dbm of d m output power (64 qa m , 54 m bps), the h m c- 755 lp 4 e achieves an error vector magnitude ( e v m ) of only 2.5% making it ideal for w i m ax/ l t e /4g appli - cations. the amplifer is packaged in a compact q fn sm t package and requires a minimum of external matching components. high gain: 31 db high p a e : 28% @ +33 dbm p out l ow e v m : 2.5% @ +25 dbm p out with 54 m bps of d m s ignal high o utput ip 3: +43 dbm i ntegrated detector & p ower control 24 l ead 4x4mm q fn p ackage: 16mm2 electrical specifcations, t a = +25 c, vcc1, 2, 3 = +5v, ven1, 2, 3 = +5v, vcs = +5v typical applications the h m c755 lp 4 e is i deal for: ? cellular/3g & l t e /4g ? w i m ax, w ibro & f ixed w ireless ? m ilitary & s atc om ? test e quipment p arameter m in. typ. m ax. units f requency r ange 2.3 - 2.8 ghz gain 28 31 db gain variation o ver temperature 0.05 db/ c i nput r eturn l oss 10 db o utput r eturn l oss 7 db o utput p ower for 1db compression ( p 1db) 28 31 dbm s aturated o utput p ower ( p sat) 33 dbm o utput third o rder i ntercept ( ip 3) [1] 43 dbm e rror vector m agnitude @ 2.5 ghz (54 m bps of d m s ignal @ +24.5 dbm p out) 2.5 % s upply current ( i cc1 + i cc2 + i cc3) 400 480 600 ma control current ( i en1 + i en2 + i en3) 16 ma bias current ( i cs) 12 ma [1] two-tone output power of +25 dbm per tone, 1 m hz spacing.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz -20 -10 0 10 20 30 40 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 s21 s11 s22 response (db) frequency (ghz) -20 -15 -10 -5 0 2 2.2 2.4 2.6 2.8 3 3.2 +25 c +85 c - 40 c return loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 2 2.2 2.4 2.6 2.8 3 3.2 +25 c +85 c - 40 c isolation (db) frequency (ghz) 10 15 20 25 30 35 40 2 2.2 2.4 2.6 2.8 3 3.2 +25 c +85 c - 40 c gain (db) frequency (ghz) -15 -10 -5 0 2 2.2 2.4 2.6 2.8 3 3.2 +25 c +85 c - 40 c return loss (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t p1db vs. temperature psat vs. temperature output ip3 vs. temperature @ 26 dbm vdet output voltage vs. temperature power compression @ 2.5 ghz output ip3 vs. temperature @ 2.4 ghz hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz 20 25 30 35 40 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 30 35 40 45 50 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) 0 0.5 1 1.5 2 2.5 3 3.5 13 17 21 25 29 33 +25 c +85 c - 40 c vdet (v) output power (dbm) 20 25 30 35 40 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25 c +85 c - 40 c psat (dbm) frequency (ghz) 30 35 40 45 50 18 19 20 21 22 23 24 25 26 27 +25 c +85 c - 40 c ip3 (db) single tone pout (dbm) 0 10 20 30 40 50 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 gain & power vs. supply voltage noise figure vs. temperature power dissipation evm vs. frequency (54 mbps ofdm signal) evm vs. temperature @ 2.5 ghz (54 mbps ofdm signal) hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz 20 30 40 50 4.5 5 5.5 gain p1db ip3 gain (db), p1db (dbm), ip3 (dbm) supply voltage (v) 2 2.5 3 3.5 4 4.5 5 5.5 6 -20 -15 -10 -5 0 5 power dissipation (w) input power (dbm) max pdiss @ +85c 0 1 2 3 4 5 6 7 15 17 19 21 23 25 27 2.3 ghz 2.4 ghz 2.5 ghz 2.6 ghz 2.7 ghz 2.8 ghz evm (%) output power (dbm) 0 1 2 3 4 5 6 7 15 17 19 21 23 25 27 +25 c +85 c - 40 c evm (%) output power (dbm) 0 2 4 6 8 10 12 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25 c +85 c - 40 c noise figure (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t outline drawing no t es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d imensions a re in in ch es [ millime t ers ] 3. le ad sp ac in g t oler a n c e is non -cu m u l at i v e . 4. p ad bu rr len gth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm. 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. refer to h i tt i t e a ppli cat ion not e for s ugg es t e d l a n d p att ern . absolute maximum ratings collector bias voltage (vcc1, vcc2, vcc3) 5.5v control voltage (v en 1, 2, 3) vcc +0.5 rf i nput p ower ( rfin )(vcc = +5v) +5 dbm junction temperature 150 c continuous p diss (t = 85 c) (derate 80 m w /c above 85 c) 5.2 w thermal r esistance (junction to ground paddle) 12.5 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vcc (v) i cq (ma) 4.5 430 5.0 480 5.5 530 typical supply current vs. supply voltage p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c755 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 3 [2] h755 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz p in n umber f unction description i nterface s chematic 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 n /c these pins are not connected internally. however, all data shown herein was measured with these pins connected to rf /dc ground. 2 g n d ground: backside of package has exposed metal paddle that must be connected to ground thru a short path. vias under the device are required. 4 rfin this pin is dc coupled and matched to 50 o hms. 7 vc s dc power supply pin for bias circuitry. 8 - 10 v en 1 - 3 p ower control pins. f or max power these pins should be connected to 5v. this voltage can be reduced, or r 1- r 4 resistor values increased to reduce the quiescent current. f or full power down, apply v <0.5v 11 vd e t dc voltage output proportional to rfo ut signal. 15, 16, 17 rfo ut rf output and dc bias for the output stage. e xternal rf matching, bypass capacitors, and pull up choke are required as shown in the application circuit. 20 vcc2 p ower supply voltage for the second amplifer stage. e xternal bypass capacitors and pull up choke are required as shown in the application schematic. 23 vcc1 p ower supply voltage for the frst amplifer stage. e xternal bypass capacitors are required as shown in the application schematic. pin descriptions
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t evaluation pcb the circuit board used in the application should use rf circuit design techniques. s ignal lines sho- uld have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes and the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 123643 [1] i tem description j1, j2 p cb m ount sm a connector j3, j4 2 mm m olex header c1 - c10 100 p f capacitor, 0402 p kg. c11 3 p f capacitor ultra l ow es d, 0603 p kg. c12 1.5 p f capacitor ultra l ow es d, 0603 p kg. c13 - c15 1000 p f capacitor, 0603 p kg. c16 2.2 f capacitor, tantalum c17 4.7 f capacitor, tantalum c18 - c12 10000 p f capacitor, 0402 p kg. l 1 10 nh i nductor, 0603 p kg. r 1 0 o hm r esistor, 0402 p kg. r 2 200 o hm r esistor, 0402 p kg. r 3 300 o hm r esistor, 0402 p kg. r 4 130 o hm r esistor, 0402 p kg. hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz i tem description u1 h m c755 lp 4 e p ower amplifer p cb [2] 123641 e val board [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 hmc755lp4e v03.1110 gaas mmic 1 watt power amplifier, 2.3 - 2.8 ghz application circuit tl1 tl2 i mpedance 28 o hm 50 o hm p hysical l ength 0.0465 0.1950 e lectrical l ength @ 25 ghz 5.9 22.6 m easurement p ackage edge to center of capacitor c11 center of capacitor c11 to center of capacitor c12 p cb m aterial: 10 mil r ogers 4350 or arlon 25 fr
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